Fabrication of Organic Light-Emitting Devices with Indium-Tin-Oxide Anode Prepared by Spray Chemical Vapor Deposition

摘要

Organic light-emitting devices (OLEDs) were fabricated using an indium-tin-oxide (ITO) anode and a small molecular light-emitting material, tris(8-hydroxyquinolinato) aluminum (Al_(q3)). The ITO anode (thickness, 120nm) was prepared inexpensively by spray chemical vapor deposition using ethanol solution consisting of indium chloride and tin chloride onto a glass substrate at 270 °C, which is 80 °C lower than the temperature previously reported by the present authors. The work function and lowest resistivity of the as-deposited anode containing 6.6 at. % Sn were respectively 4.7 V and 3.7 × 10~(-4) Ω-cm. The luminance and turn-on threshold voltage of the OLED were respectively 6500 cd/m~2 and 3.5 V. These values agreed with those of an OLED with the same layer structure but without the commercial ITO anode deposited by physical vapor deposition. The effects of tin concentration in the present ITO anode on the work function and device performance were also investigated.