首页> 外国专利> METHOD FOR MANUFACTURING AN OXIDE LAYER OF Mg-BASED METAL SUITABLE FOR FORMING AN OXIDE LAYER WITH A DRY TYPE SURFACE TREATMENT METHOD USING ARC PLASMA

METHOD FOR MANUFACTURING AN OXIDE LAYER OF Mg-BASED METAL SUITABLE FOR FORMING AN OXIDE LAYER WITH A DRY TYPE SURFACE TREATMENT METHOD USING ARC PLASMA

机译:制造镁基金属氧化物层的方法适合于采用电弧等离子体的干式表面处理方法形成氧化物层

摘要

PURPOSE: A method for manufacturing an oxide layer of Mg-based metal is provided to eco-friendly form an oxide layer on Mg and a Mg alloy to be thick and fine in a short time.;CONSTITUTION: A method for manufacturing an oxide layer of Mg-based metal includes the following steps of: forming an oxide layer by radiating plasma using source gas to a Mg-based parent metal; and applying cathode on the Mg-based parent metal when irradiating the plasma. The source gas includes one or more kinds among nitrogen, air, and oxygen. The temperature of the plasma is 100-500°C. The plasma is radiated for 1 to 10 minutes at a position apart from 3-20 mm.;COPYRIGHT KIPO 2013;[Reference numerals] (AA) Plasma generating unit; (BB) Plasma; (CC) Magnesium-based parent material; (DD) Reaction of O and O_2 in the air; (EE) Micro-arc; (FF) Form an oxidized layer
机译:目的:提供一种制造镁基金属氧化物层的方法,以在短时间内使镁和镁合金上的氧化物层形成环境友好的结构,使其既厚又细。 Mg基金属包括以下步骤:通过使用源气体辐射等离子体到Mg基母金属上形成氧化层;当照射等离子体时,在Mg基母金属上施加阴极。原料气体包括氮气,空气和氧气中的一种或多种。等离子体的温度为100-500℃。在距3-20 mm的位置辐射等离子1至10分钟。; COPYRIGHT KIPO 2013; [参考数字](AA)等离子发生单元; (BB)等离子; (CC)镁基母材; (DD)空气中O和O_2的反应; (EE)微弧; (FF)形成氧化层

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