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SPIN TORQUE TRANSFER CELL STRUCTURE UTILIZING FIELD-INDUCED ANTIFERROMAGNETIC OR FERROMAGNETIC COUPLING
SPIN TORQUE TRANSFER CELL STRUCTURE UTILIZING FIELD-INDUCED ANTIFERROMAGNETIC OR FERROMAGNETIC COUPLING
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机译:利用场致反铁磁或铁磁耦合的自旋扭矩转移细胞结构
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摘要
A magnetic memory cell including a soft magnetic layer and a coupling layer, and methods of operating the memory cell are provided. The memory cell includes a stack with a free ferromagnetic layer and a pinned ferromagnetic layer, and a soft magnetic layer and a coupling layer may also be formed as layers in the stack. The coupling layer may cause antiferromagnetic coupling to induce the free ferromagnetic layer to be magnetized in a direction antiparallel to the magnetization of the soft magnetic layer, or the coupling layer may cause ferromagnetic coupling to induce the free ferromagnetic layer to be magnetized in a direction parallel to the magnetization of the soft magnetic layer. The coupling layer, through a coupling effect, reduces the critical switching current of the memory cell.
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