首页> 外国专利> METHOD FOR FABRICATING A TRANSPARENT ELECTRODE CAPABLE OF CHANGING A RESISTANCE STATE INTO A LOW RESISTANCE STATE AND A SEMICONDUCTOR DEVICE USING THE SAME

METHOD FOR FABRICATING A TRANSPARENT ELECTRODE CAPABLE OF CHANGING A RESISTANCE STATE INTO A LOW RESISTANCE STATE AND A SEMICONDUCTOR DEVICE USING THE SAME

机译:用相同的方法制造能将电阻状态改变成低电阻状态的透明电极的方法和半导体装置

摘要

PURPOSE: A method for fabricating a transparent electrode and a semiconductor device using the same are provided to form a transparent electrode of conductivity by performing a forming process.;CONSTITUTION: One surface of a transparent electrode (20) is in contact with a semiconductor layer. The resistance state of the transparent electrode is changed from a high resistance state to a low resistance state. A metal electrode pad (30) is made of a metal. A metal electrode pad is formed on a surface opposite to one surface touching the semiconductor layer. A forming process is performed on the transparent electrode to form a conductive filament (22).;COPYRIGHT KIPO 2013
机译:目的:提供一种用于制造透明电极的方法和使用该方法的半导体器件,以通过执行形成工艺来形成导电性的透明电极。;构成:透明电极(20)的一个表面与半导体层接触。 。透明电极的电阻状态从高电阻状态改变为低电阻状态。金属电极垫(30)由金属制成。在与接触半导体层的一个表面相对的表面上形成金属电极焊盘。在透明电极上执行形成工艺以形成导电丝(22).; COPYRIGHT KIPO 2013

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