Cu-Mn ALLOY SPUTTERING TARGET MATERIAL, THIN FILM TRANSISTOR WIRE AND THIN FILM TRANSISTOR USING THE SAME

摘要

PURPOSE: A Cu-Mn alloy sputtering target material, a thin film transistor wire and a thin film transistor using the same are provided to secure high operation by using amorphous silicon semiconductor. CONSTITUTION: A Cu-Mn alloy sputtering target(10) includes Mn of 8-30 atom%. The average grain size of Cu-Mn alloy is 10-50 Mm. A stack structure is formed on a substrate. The stack structure includes a Cu-Mn alloy film and a Cu film.