METHOD OF FORMING BUFFER ARCHITECTURE (VERSIONS) AND MICROELECTRONIC STRUCTURE FORMED THUS

摘要

FIELD: physics.;SUBSTANCE: method of forming buffer architecture involves forming a GaSb nucleating layer on a substrate, forming a Ga(Al)AsSb buffer layer on the GaSb nucleating layer, forming a lower In_0.52Al_0.48As barrier layer on the Ga(Al)AsSb buffer layer and forming a In_xAl_1-xAs transition layer on the lower In_0.52Al_0.48As barrier layer.;EFFECT: invention enables to make structures with quantum wells based on InGaAs with few defects and the required quality.;20 cl, 3 dwg