首页> 外国专利> A method for fabricating an integrated lead less - housing - circuit, and integrated lead less - housing - circuit

A method for fabricating an integrated lead less - housing - circuit, and integrated lead less - housing - circuit

机译:一种集成无铅外壳-电路的制造方法以及集成无铅外壳-电路

摘要

A method for fabricating an integrated lead less - housing - circuit, comprising the steps of:– Providing a leadframe - frame (1) with an upper side and a lower side and at least one leadframe - section (2, 3, 4, 5) in one of a plastic housing (6) surrounding a semiconductor device is provided, with which is formed as conductor tracks (7) regions of the leadframe - section (2, 3, 4, 5) an outer surface of the plastic housing (6) penetrate,wherein, prior to a step of severing of the conductor tracks (7) to singulate an integrated circuit of the step of:– Acting upon at least of a transition area between the plastic housing (6) and conductor tracks (7) with high-energy radiation from the surface - and the underside of the leadframe - frame, and indeed in such a way that, in the transition area of the parts of the plastic housing (6) are removed,– Separation of the conductor tracks (7) to singulate of the integrated lead less - housing - circuit under producing separating surfaces (10), so that between each of the separating surface (10) and a region of the respective separating surface (10) surrounding plastic housing (6), in plan view on..
机译:一种用于制造集成无铅外壳电路的方法,包括以下步骤:–提供引线框架-具有上侧和下侧的框架(1)和至少一个引线框架-部分(2、3、4、5 )在围绕半导体器件的塑料外壳(6)中的一个中提供,该塑料外壳形成为导线架(7)的引线框区域-部分(2、3、4、5)塑料外壳(2)的外表面6)在切断导体线路(7)的步骤之前切入一个集成电路,该步骤如下:–至少作用于塑料外壳(6)和导体线路(7)之间的过渡区域)从表面-以及引线框的底面-框架发出的高能量辐射,并且实际上是这样的,即在塑料外壳(6)的各个部分的过渡区域中将其移除,–导体走线的分离(7)将产生的分离面(10)下的集成式无铅-外壳-电路单片化,s o在平面图中,在每个分隔表面(10)和各个分隔表面(10)围绕塑料外壳(6)的区域之间。

著录项

  • 公开/公告号DE10063041B4

    专利类型

  • 公开/公告日2012-12-06

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2000163041

  • 申请日2000-12-18

  • 分类号H01L21/60;H01L23/50;H01L23/28;

  • 国家 DE

  • 入库时间 2022-08-21 16:22:41

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