A process for the formation of highly resolved structures with the desired thickness or a high aspect ratio by means of a dry film resists

摘要

A process for the formation of a high-resolution structure (20) with a desired thickness and a high aspect ratio by means of a dry film resists (30) by selective removal of the on a substrate (10) is applied to the dry film resists (30) by means of exposure and depositing a functional material (m) in a region of which the dry film resist (30) has been removed, the method comprising:a protective layer - forming step (s0) of the forming a protective layer for the protection of the substrate (10) or of the structure (20), which on the substrate (10) is formed, in front of contamination, which, before, during or after the processing occur;a dry film resist - applying step (s1) of the application of a dry film resists (30) having a thickness of 100 × β / α (μm) or more on the substrate (10) by means of a laminator, with the proviso that the proportion by volume of the functional material (m), which ultimately remain behind as a film is, α (volume -%), and in that a required thickness of a structure (20) β (μm), wherein the dry film resist (30) from a plurality of..