A semiconductor device and method for the production of a hybrid contact structure with contacts with a small aspect ratio in the case of a semiconductor device

摘要

A method with:Forming a dielectric layer by means of a circuit element, which is a in a semiconductor region has a contact region;Forming a contact element in the dielectric layer in such a way that it establishes a connection to the contact region, wherein the contact element has a first conductive material;Forming a depression in the contact element by removing a portion of the first conductive material;Form of a trench in the dielectric layer after the forming of the depression, wherein the trench is in connection with the contact element;Forming a barrier material layer in the recess; andFilling of the recess with a second conductive material, which is distinguished from the first conductive material, after the forming of the barrier material layer.