首页> 外国专利> Interference lithography device for use in patterning of light exit surface of wafer for high brightness LED, has phase/blaze grating with low period length, for coherent superposition of sub-beams in image plane

Interference lithography device for use in patterning of light exit surface of wafer for high brightness LED, has phase/blaze grating with low period length, for coherent superposition of sub-beams in image plane

机译:用于图案化用于高亮度LED的晶片的光出射面的干涉光刻设备,具有低周期长度的相位/火焰光栅,用于子光束在像平面中的相干叠加

摘要

The interference lithography device (1) has an illumination device (2) for providing the radiation beam (3). A phase/blaze grating (4) with high period length (P1) is arranged in downstream of the illumination device for diffracting the radiation beam into two sub-beams (3a,3b). A phase/blaze grating (9) with low period length (P2) is arranged in downstream of the grating (4), for coherent superposition of the sub-beams in an image plane (7). An independent claim is included for method for producing interference pattern by interference lithography.
机译:干涉光刻设备(1)具有用于提供辐射束(3)的照明设备(2)。具有高周期长度(P1)的相位/火焰光栅(4)布置在照明装置的下游,用于将辐射束衍射成两个子光束(3a,3b)。具有低周期长度(P2)的相位/火焰光栅(9)被布置在光栅(4)的下游,用于子光束在像平面(7)中的相干叠加。通过干涉光刻产生干涉图案的方法包括独立权利要求。

著录项

  • 公开/公告号DE102011081110A1

    专利类型

  • 公开/公告日2013-01-03

    原文格式PDF

  • 申请/专利权人 CARL ZEISS SMT GMBH;

    申请/专利号DE20111081110

  • 发明设计人 GOEHNERMEIER AKSEL;

    申请日2011-08-17

  • 分类号G03F7/20;

  • 国家 DE

  • 入库时间 2022-08-21 16:22:21

相似文献

  • 专利
  • 外文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号