首页> 外国专利> Method for manufacturing e.g. anisotropic magneto resistive effect sensor, involves assembling and contacting sensor chip on contacting surface of signal processing after signal processing chip is mounted on carrier frame

Method for manufacturing e.g. anisotropic magneto resistive effect sensor, involves assembling and contacting sensor chip on contacting surface of signal processing after signal processing chip is mounted on carrier frame

机译:制造方法例如各向异性磁阻效应传感器,涉及将信号处理芯片安装在载体框架上后,在信号处理的接触面上组装并接触传感器芯片

摘要

The method involves placing a spacer between a signal processing chip in form of an application-specific integrated circuit (6), and a carrier frame i.e. lead frame (4), before adhering the processing chip on the frame. The processing chip is assembled and contacted with an active contacting surface on the frame by adhering or soldering process. An anisotropic magneto resistive effect (AMR) sensor chip (8) is assembled and contacted on another active contacting surface of the processing chip after the processing chip is mounted on the frame. The active contacting surfaces are formed as connection points (10, 12). An independent claim is also included for an electronic component.
机译:该方法包括在将处理芯片粘附在专用集成电路(6)形式的信号处理芯片与载体框架即引线框架(4)之间放置间隔物。组装处理芯片,并通过粘附或焊接工艺使其与框架上的有效接触表面接触。在将处理芯片安装在框架上之后,各向异性磁阻效应(AMR)传感器芯片(8)组装并接触到该处理芯片的另一个有效接触表面上。有源接触表面形成为连接点(10、12)。电子元件也包括独立权利要求。

著录项

  • 公开/公告号DE102011088197A1

    专利类型

  • 公开/公告日2013-06-13

    原文格式PDF

  • 申请/专利权人 CONTINENTAL TEVES AG & CO. OHG;

    申请/专利号DE20111088197

  • 发明设计人 GERNER MATHIAS;SCHILLINGER JAKOB;

    申请日2011-12-09

  • 分类号H01L21/58;H01L23/495;H01L23/528;H01L21/60;

  • 国家 DE

  • 入库时间 2022-08-21 16:22:19

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