Making semiconductor structure, comprises forming first opening in dielectric layer, forming opening in dielectric material, forming seed layer within first opening, forming masking layer, and forming fill layer over seed layer

摘要

The method of making a semiconductor structure (102), comprises: forming a first opening in a dielectric layer (140); forming an opening in the dielectric material; forming a seed layer within the first opening; forming a masking layer over the seed layer; patterning the masking layer to forth a second opening over the first opening; forming a fill layer over the seed layer; causing the seed layer to react with the dielectric layer form a barrier layer (130); removing the patterned masking layer, removing that portion of the seed layer uncovered by removing the patterned masking layer. The method of making a semiconductor structure (102), comprises: forming a first opening in a dielectric layer (140); forming an opening in the dielectric material; forming a seed layer within the first opening; forming a masking layer over the seed layer; patterning the masking layer to forth a second opening over the first opening; forming a fill layer over the seed layer; causing the seed layer to react with the dielectric layer form a barrier layer (130); removing the patterned masking layer, removing that portion of the seed layer uncovered by removing the patterned masking layer. The seed layer comprises a base element and an additional element. The additional element is = 10 at.%. The conductive structure is a bond pad. The masking layer comprises a photoresist layer. The seed layer comprises an alloy, which comprises the base element and the additional element. The fill layer forms a bond pad. The step of causing the seed layer comprises thermal annealing step, and causing the additional element to react with the dielectric layer. The step of forming the fill layer comprises an electrodeposition process. The exposed seed layer is present within the opening. The base element is a first metallic element. The additional element is a second metallic element different from the first metallic element. An independent claim is included for a semiconductor structure.