Making power semiconductor component, forms layered structure containing material of greater dielectric constant and recesses which are filled with semiconductor to form drift zone

摘要

To make the drift zone (34) and layers (32) penetrating it, A layer structure is first formed. This contains material (32) of greater dielectric constant and also recesses (33) on a substrate (30) or on layers provided on it (30). The drift zone is formed by filling (at least in part) the recesses (33) in the layer structure with semiconductor material. An independent claim is included for the corresponding power semiconductor component.