Electronic structure, comprising at least one metal - epitaxial growth layer as well as the method of making an electronic structure

摘要

In various embodiments, an electronic structure (100) is provided, which at least one organic layer (112) and at least one on the organic layer (112) grown metal - epitaxial growth layer (114) and at least one of the metal - epitaxial growth layer (114) grown metal layer (116), wherein the at least one metal - epitaxial growth layer (114) contains germanium.