首页> 外国专利> Method for realizing three-dimensional integrated structure, involves realizing electrically conductive through-connection extending between non-assembled face and metal line of interconnection part of one of two integrated circuits

Method for realizing three-dimensional integrated structure, involves realizing electrically conductive through-connection extending between non-assembled face and metal line of interconnection part of one of two integrated circuits

机译:实现三维集成结构的方法,涉及实现在两个集成电路之一的互连部分的未组装面和金属线之间延伸的导电直通连接

摘要

The method involves directly bonding a front face of an integrated circuit (C11) and a front face of another integrated circuit (C12), where the front faces comprise insulating material and copper material. An electrically conductive through-connection extending between a non-assembled face (BF11), of the former integrated circuit, opposed to the former front face, and a metal line (LM1) of an interconnection part of one of the two integrated circuits, is realized. The latter integrated circuit is positioned within an integrated circuit board. The integrated circuit bonded to another integrated circuit is partially encapsulated in a resin. An independent claim is also included for a three-dimensional (3D) integrated structure.
机译:该方法包括直接结合集成电路(C11)的正面和另一个集成电路(C12)的正面,其中所述正面包括绝缘材料和铜材料。在前者集成电路的与前者正面相对的未组装面(BF11)与两个集成电路之一的互连部分的金属线(LM1)之间延伸的导电直通连接是实现。后者的集成电路位于集成电路板上。结合到另一集成电路的集成电路被部分地封装在树脂中。三维(3D)集成结构也包含独立声明。

著录项

  • 公开/公告号FR2980036A1

    专利类型

  • 公开/公告日2013-03-15

    原文格式PDF

  • 申请/专利权人 STMICROELECTRONICS (CROLLES 2) SAS;

    申请/专利号FR20110058081

  • 发明设计人 CHAPELON LAURENT-LUC;

    申请日2011-09-12

  • 分类号H01L21/98;H01L23/522;

  • 国家 FR

  • 入库时间 2022-08-21 16:21:06

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