Silicon-on-insulator structure for use in e.g. electronic application, has central layer made of electrically insulating material different from material of lower and upper layers that consist of silicon oxide to stabilize central layer

摘要

The structure (1) has an electrically insulating structure (20) inserted between a support substrate (10) and a top layer (31). The insulating structure comprises an electrically insulating central layer (22) with a thickness ranging between 2 and 10 nm and placed between an electrically insulating lower layer (21) and an electrically insulating upper layer (23). The central layer is made of electrically insulating material different from a material of the lower and upper layers. The lower and the upper layers consist of silicon oxide to stabilize the central layer. An independent claim is also included for a method for manufacturing a silicon-on-insulator structure.