Method for forming oxide layer on substrate e.g. silicon-on-insulator substrate, for manufacturing e.g. mobile telephone, involves oxidizing precursory layer of certain material to obtain oxide layer of certain material

摘要

The method involves supplying reaction gas on a substrate, where the reaction gas exhibits an organic compound comprising reaction-restraining functional groups. A layer of reaction-restraining functional groups is formed (S11) on a surface of the substrate. A precursory layer of a certain material is formed (S12) on the layer of the reaction-restraining functional groups. The precursory layer is oxidized (S13) to obtain an oxide layer of the certain material, where the organic compound comprises hydroxyl groups, and oxygen radicals are connected with a central metal. The reaction-restraining functional groups comprise alkoxy groups with 1 to 4 carbon atoms, aryloxy groups with 6 to 10 carbon atoms, ester groups with 1 to 5 carbon atoms, or aryl ester groups with 7 to 10 carbon atoms. The binding energy between the central metal and the oxygen radicals is weaker than the binding energy between silicon and the oxygen radicals and the binding energy between aluminum and the oxygen radicals.