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Materials with layered structures XIII: electrical and optical properties of layered chalcogenides in the system CoIn_2S_4―CoIn_2Se_4

机译:具有层状结构的材料XIII:CoIn_2S_4―CoIn_2Se_4系统中层状硫族化物的电和光学性质

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摘要

The system CoIn_2S_(4x)Se_(4(1-x)) has been investigated by X-ray powder methods on samples quenched at 700℃. The spinel type phase has a phase width of 1 ≥ x > 0.9. A new layered compound is formed for 0.9 > x > 0.45 which crystallizes with the α-FeGa_2S_4-type with a = 392.6 pm and c = 1270.3 pm (x = 0.5) for the hexagonal cell. Platelike crystals of the layered phase are obtained by transport reactions with iodine in a temperature gradient 750 → 700℃. The band gaps of these crystals measured by optical absorption vary from 1.2 to 1.4 eV. The electrical conductivities of the crystals are found in the order of 10~(-5) Ω~(-1) cm~(-1).
机译:用X射线粉末法对在700℃淬火的样品进行了CoIn_2S_(4x)Se_(4(1-x))体系的研究。尖晶石型相的相宽为1≥x> 0.9。形成新的层状化合物,其0.9> x> 0.45,对于六方晶胞,其结晶为α-FeGa_2S_4-型,其a = 392.6 pm和c = 1270.3 pm(x = 0.5)。通过与碘在750→700℃的温度梯度下进行迁移反应,可以得到层状相的板状晶体。通过光吸收测量的这些晶体的带隙在1.2至1.4eV之间变化。晶体的电导率大约为10〜(-5)Ω〜(-1)cm〜(-1)。

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