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MATERIAL FOR ORGANIC THIN-FILM TRANSISTOR INSULATING LAYER, AND ORGANIC THIN-FILM TRANSISTOR

机译:有机薄膜绝缘层的材料以及有机薄膜晶体管

摘要

PROBLEM TO BE SOLVED: To provide a material for an organic thin-film transistor insulating layer that enables manufacture of an organic thin-film transistor with large mobility.;SOLUTION: A material for an organic thin-film transistor insulating layer contains a polymer compound (A-1) including a repeating unit with a structure obtained by removing one hydrogen atom from an ion liquid. As the repeating unit with a structure obtained by removing one hydrogen atom from the ionic liquid, a repeating unit represented by formula (1) is given.;COPYRIGHT: (C)2014,JPO&INPIT
机译:要解决的问题:提供一种用于有机薄膜晶体管绝缘层的材料,该材料能够制造具有高迁移率的有机薄膜晶体管。;解决方案:用于有机薄膜晶体管绝缘层的材料包含高分子化合物(A-1)包括具有通过从离子液体中除去一个氢原子而获得的结构的重复单元。作为具有通过从离子液体中除去一个氢原子而获得的结构的重复单元,给出了由式(1)表示的重复单元。版权所有:(C)2014,JPO&INPIT

著录项

  • 公开/公告号JP2014110251A

    专利类型

  • 公开/公告日2014-06-12

    原文格式PDF

  • 申请/专利权人 SUMITOMO CHEMICAL CO LTD;

    申请/专利号JP20120262286

  • 发明设计人 YAHAGI MITSURU;

    申请日2012-11-30

  • 分类号H01L21/312;H01L29/786;H01L21/336;H01L51/05;H01L51/30;C08F12/02;C08F16/12;C08F20/10;C08F20/42;C08F20/52;C08G59/02;

  • 国家 JP

  • 入库时间 2022-08-21 16:20:10

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