Organic-Inorganic Hybrid Materials for Flexible Thin-Film Transistors

摘要

A hybrid gate insulator of poly(methyl silsesquioxane) (PMSQ) exhibits excellent insulating properties, low curing temperature of 150 °C and low surface energy. Hybrid semiconductors, silica nanoparticles (SNPs) added organic semiconductors exhibit drastic improvement of their wettability on insulator surfaces with low surface energy and of their crystallinity. Excellent electrical characteristics of thin-film flexible field-effect transistors fabricated using the hybrid materials has been demonstrated.