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RESISTANCE EXTRACTION APPARATUS, RESISTANCE EXTRACTION METHOD, AND COMPUTER-READABLE RECORDING MEDIUM

机译:电阻提取装置,电阻提取方法和计算机可读记录介质

摘要

PROBLEM TO BE SOLVED: To provide a resistance extraction apparatus and a resistance extraction method for extraction of source and drain resistance values of a transistor such as silicon nanowire MOSFET.;SOLUTION: The present invention receives parameter values of a semiconductor element measured in turn-on and turn-off states of the semiconductor element (S1100), extracts resistance values independent of voltage, using parameter values measured in a turn-off state (S1110), receives parameter values measured in a turn-on state (S1120), and extracts resistance values dependent on a voltage applied to the semiconductor element (S1130).;COPYRIGHT: (C)2014,JPO&INPIT
机译:解决的问题:提供一种电阻提取装置和电阻提取方法,用于提取诸如硅纳米线MOSFET之类的晶体管的源极和漏极电阻值。解决方案:本发明接收依次测量的半导体元件的参数值。半导体元件的导通和截止状态(S1100),使用在截止状态下测量的参数值来提取与电压无关的电阻值(S1110),接收在导通状态下测量的参数值(S1120),以及提取取决于施加到半导体元件的电压的电阻值(S1130)。;版权所有:(C)2014,JPO&INPIT

著录项

  • 公开/公告号JP2014112673A

    专利类型

  • 公开/公告日2014-06-19

    原文格式PDF

  • 申请/专利号JP20130240730

  • 发明设计人 KANG IN-MAN;

    申请日2013-11-21

  • 分类号H01L29/786;H01L21/336;H01L29/00;H01L21/82;H01L29/78;G06F17/50;H01L21/66;G01R27/02;

  • 国家 JP

  • 入库时间 2022-08-21 16:20:09

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