FULLERENE C60 DERIVATIVE, AND RESIST COMPOSITION FOR EXTREME ULTRAVIOLET LIGHT OR ELECTRON BEAM EXPOSURE

摘要

PROBLEM TO BE SOLVED: To provide a novel fullerene C₆₀ derivative which has excellent solubility with a solvent used for a resist and has low electron accepting property, and when used as a base component of a resist composition for lithography using EUV light or EB, which gives the resist composition having high sensitivity without inhibiting generation of an acid by an acid generator.;SOLUTION: The fullerene C₆₀ derivative is represented by formula (1) below. In the formula, the structure represented by FLN enclosed by a circle represents a C₆₀ fullerene skeleton; R¹ represents a hydrogen atom or a hydrocarbon group having 1 to 24 carbon atoms; R² represents an aromatic group having a phenolic hydroxyl group; R^x represents a hydrogen atom, a hydroxyl group or an organic group having 1 to 24 carbon atoms; n is an even number of 2 to 12; and a plurality of R^x may be connected to each other to form a group coupling with two carbon atoms on the fullerene skeleton.;COPYRIGHT: (C)2014,JPO&INPIT