SYSTEM AND METHOD FOR ADAPTING PARAMETER SO AS TO ENHANCE THROUGHPUT DURING WAFER PROCESSING OF LASER BASE

摘要

PROBLEM TO BE SOLVED: To provide a system and a method for automatically changing the system of a laser base for processing a target sample such as a semiconductor wafer.SOLUTION: A system of a laser base detects a trigger related to a processing model. The processing model corresponds to a set of wafers. The system automatically adjusts one or more of system parameters based on the processing model in response to the trigger. The system selectively irradiates a structure on at least one wafer or in the wafer in the set of the wafers by using the changed system parameter. The trigger includes: a change in a heat state related to a movable stage. The system operates the movable stage by a series of movement up to reaching a heat balance threshold value in response to the change in the heat state. For example, the series of movement may be simulated from the movement used, for example, for processing a specific wafer.