SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE BY IMPLANTATION OF CARBON CLUSTER

摘要

PROBLEM TO BE SOLVED: To improve the characteristics of transistor junctions by implantation of a carbon cluster into a substrate when the substrate is doped with boron and phosphorus in manufacturing PMOS transistor structures in integrated circuits.SOLUTION: Diffusion control for USJ formation and high dose amount carbon implantation for stress engineering are performed. At first, a cluster carbon ion such as CHis implanted into a source/drain region at approximately the same dose amount as the subsequent boron implant; and then, source/drain extensions are formed by performing a shallow boron, boron cluster, phosphorus or phosphorus cluster ion implant preferably using a borohydride cluster, such as BHor BH. Upon subsequent annealing and activation, the boron diffusion is reduced, due to the gettering of interstitial defects by the carbon atoms.