Lithographic patterning process and resists used therein Related Application Cross Reference 0001 This application is a US provisional patent application filed Jul. 8, 2011, which is incorporated herein by reference in its entirety. Claim the benefit of 61 / 505,768.

摘要

A lithographic process includes the use of a silicon-containing polymer or a compound that includes at least one element selected from the group consisting of: Ta, W, Re, Os, Ir, Ni, Cu or Zn in a resist material for an EUV lithographic process. The wavelength of the EUV light used in the process is less than 11 nm, for example 6.5-6.9 nm. The invention further relates to novel silicon-containing polymers.