Dithienothiophene phthalimide semiconductor polymer

摘要

The invention concerns apolymer of the formula (I): wherein: M1 is an optionally substituted dithienophthalimide formula (II): wherein: X is N or C—R, wherein R is H or a C1-C40 alkyl group, R2, at each occurrence, is independently selected from H, a C1-40 alkyl group, a C2-40 alkenyl group, a C1-40 haloalkyl group, and a monocyclicor polycyclic moiety, wherein: each of the C1-40 alkyl group, the C2-40 alkenyl group, and the C1-40 haloalkyl group can be optionally substituted with 1-10 substituents independently selected from a halogen, CN, —NO2, OH, NH2, —NH(C1-20 alkyl), N(C1-20 alkyl)2, —S(O)2OH, —CHO, —C(O)—C1-20 alkyl, —C(O)OH, —C(O)—OC1-20 alkyl, —C(O)NH2, —C(O)NH—C1-20 alkyl, —C(O)N(C1-20 alkyl)2, —OC1-20 alkyl, —SiH3, —SiH(C1-20 alkyl)2, —SiH2(C1-20 alkyl), and —Si(C1-20 alkyl)3; and the monocyclic or polycyclic moiety can be covalently bonded to the imide nitrogen via an optional linker, and can be optionally substituted with 1-5 substituentsindependently selected from a halogen, oxo, —CN, —NO2, OH, ═C(CN)2, —NH2, —NH(C1-20 alkyl), N(C1-20 alkyl)2, —S(O)2OH, —CHO, —C(O)OH, —C(O)—C1-20 alkyl, —C(O)—OC1-20 alkyl, —C(O)NH2, —C(O)NH—C1-20 alkyl, —C(O)N(C1-20 alkyl)2, —SiH3, —SiH(C1-20 alkyl)2, —SiH2(C1-20 alkyl), —Si(C1-20 alkyl)3, —O—C1-20 alkyl, —O—C1-20 alkenyl, —O—C1-20 haloalkyl, C1-20 alkyl, C1-20 alkenyl, C1-20 haloalkyl, C7-20 arylalkyl, C6-20 aryloxy and C7-20 arylcarbonyl. M2 is a repeating unit comprising one or more cyclic moieties; and n is an integer between 2 and 5,000.