METHOD FOR CONTROLLING COMPOSITION OF COMPLEX OXIDE THIN FILM AND THIN FILM GROWTH APPARATUS

摘要

PROBLEM TO BE SOLVED: To control a composition of metal materials consisting a complex oxide easier and more rapidly.;SOLUTION: On growing a thin film of a complex oxide LaScO₃, PrScO₃, NdScO₃, and SmScO₃ on a LaAlO₃ substrate by reacting a plurality of metal elements using a molecular beam epitaxy (MBE) method, excess amount of Sc over other metal elements is supplied based on the fact that the vapor pressure of Sc₂O₃ is higher than that of metal Sc.;COPYRIGHT: (C)2014,JPO&INPIT