Resistance -change memory element , and , resistive nonvolatile memory , as well as , the resistance-change memory element control method

摘要

PPROBLEM TO BE SOLVED: To provide a resistance random access memory element achieving small variations in switching characteristics and suitable for high integration, and to provide a method of controlling the resistance random access memory element. PSOLUTION: The resistance random access memory element 20 includes: a variable resistance film having a titanium oxide film 2 and a zirconium oxide film 3; a first electrode 1 formed under the titanium oxide film 2; and a second electrode 4 formed on the zirconium oxide film 3. The titanium oxide film 2, a crystal grain of which easily grows larger, can be thinned, and the microcrystalline zirconium oxide film 3 is flat, thereby the surface irregularities of a zirconium oxide/titanium oxide laminated film can be reduced. When the resistance random access memory element is miniaturized, variations in electrical characteristics due to the surface irregularities of the variable resistance film can be reduced. PCOPYRIGHT: (C)2011,JPO&INPIT