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The sample for depth proofreading of secondary ion mass spectrometry, irradiating the oxygen ion to the production manner and
The sample for depth proofreading of secondary ion mass spectrometry, irradiating the oxygen ion to the production manner and
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机译:二次离子质谱的深度校对样品,以生产方式照射氧离子,
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摘要
PROBLEM TO BE SOLVED: To provide a standard sample for depth calibration of secondary ion mass spectrometry which has an impurity concentration distribution in a shallow region like a transition region.;SOLUTION: The standard sample is produced by steps of: forming an ion implantation layer 2 by ion-implanting In or Ga to a silicon substrate 1; and forming a redistribution layer 4 by accumulating ion-implanted In or Ga in a neighborhood of the surface of the silicon substrate 1 by irradiating the silicon substrate 1 with an oxygen ion 3. A standard sample having a known In or Ga concentration distribution is prepared according to the irradiation angle and irradiation energy of the oxygen ion 3.;COPYRIGHT: (C)2010,JPO&INPIT
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