Situ low dielectric constant capping to improve the resistance to integrated damaging

摘要

Method and apparatus for forming a low dielectric constant dielectric layer containing voids is provided. In one embodiment, a method for processing a substrate is provided. And placing the substrate within the processing region, the organosilicon compound and reacting in the presence of plasma porogen provides precursor oxide gas, silicon, oxygen, and this method is low porogen containing carbon on a substrate the method comprising depositing a dielectric constant dielectric layer, and the silicon, oxygen, and depositing a porous dielectric capping layer containing carbon porogen containing low k dielectric layer, and a porogen containing low k dielectric layer UV by (UV) curing the porous dielectric capping layer, removing at least a portion of the porogen from the porogen-containing low-k dielectric layer through the porous dielectric capping layer, a gap, the porogen-containing low k dielectric layer and a, and be converted to porous low-k dielectric layer having.