Semiconductor light-emitting devices based on the crystal structure relaxation

摘要

I discloses a method of manufacturing a semiconductor light emitting device having a plurality of light sources. The method includes disposing a masking layer on the growth surface on a step of providing a substrate having a growth surface. And a plurality of openings exposing the growth surface, the maximum transverse dimension of each opening is less than 0.3μm, the mask layer, the mask layer, first mask layer portion having a plurality of apertures and has the same surface area and a second mask layer portion, and a first mask layer portion shows a first ratio between the non-exposed area of ​​the growth surface and the exposed area of ​​the growth surface, the second mask layer portion exposed growth surface shows a second ratio between the non-exposed area of ​​the growth surface and the area ratio and the second ratio different from the first. The method also includes the step of growing the base structure on the growth surface at each of the plurality of openings of the mask layer, and a step of growing the light generating quantum well layer in at least one surface of each of the pedestal structure.