Well formation of superlattice and/or in the light-emitting diode which possesses the active region with

摘要

PROBLEM TO BE SOLVED: To provide a light emitting diode that can reduce occurrence of crystal defects caused by lattice misalignment of a well layer and a barrier layer in an active region.;SOLUTION: In a light emitting diode comprising an active region between an n-type nitride gallium-based compound semiconductor layer and a p-type nitride gallium-based semiconductor layer, the active region comprises a well layer and/or a barrier layer of superlattice structure. The well layer of the superlattice structure and/or the barrier layer of the superlattice structure are employed in the diode. Thereby, occurrence of defects caused by lattice misalignment between the well layer and the barrier layer can be reduced.;COPYRIGHT: (C)2013,JPO&INPIT