In the manufacture of integrated circuits , ultrafast laser annealing with reduced pattern density effect

摘要

PROBLEM TO BE SOLVED: To reduce the pattern density effect with poly-gate laser annealing.;SOLUTION: Laser annealing comprises a step of scanning a patterned surface 12 of a substrate with at least one first laser beam 168. This at least one first laser beam heats the patterned surface up to non-melting temperature T_nonmelt, which is within 400°C from melting temperature T_melt. This method further comprises a step of scanning the patterned surface with at least one second laser beam 268 in relation with the first laser beam. The at least one second laser beam is a pulsed form and heats the patterned surface up to the melting temperature from the non-melting temperature prepared by the at least one first laser beam.;COPYRIGHT: (C)2013,JPO&INPIT