We have possessed the peak of grain size in 10 -

摘要

It is washing method of the semiconductor wafer whose topic of this invention, going at room temperature, being effective, furthermore is easy to environment, uses ozone and to offer the cleaning device. The washing method of the semiconductor wafer of this invention form as the solution expedient, we have possessed the peak of grain size in 10 - 15 millimicrons pure water where electric conductivity is below 1 S/cm pH being maximum, in the aqueous solution which it decreases up to 1 it made, grain size 50 millimicrons or less, at the time of measuring by the particle counter in the liquid of laser optical cutoff system by the fact that acid is added to medium or aforementioned pure water, the quantity in the territory of that peak is 1000 /mL or more, making the water which includes the minute air bubble which contains ozone, the surface of the semiconductor wafer contact, doing featureWith it does. The cleaning device of the semiconductor wafer of this invention features that it possesses the expedient in order to make the water which includes the minute air bubble which contains the expedient in order to produce the water which includes the minute air bubble which contains the aforementioned ozone and the ozone which is produced the surface of the semiconductor wafer contact at least.