The device simulation device, the local density of states

摘要

PROBLEM TO BE SOLVED: To provide an effective impurity potential calculating method for numerically and stably calculating effective impurity potential with respect to discrete impurities in a semiconductor without including an arbitrary parameter.;SOLUTION: The effective impurity potential calculating method includes: a process (step S1) for calculating a local state density when one impurity exists in the semiconductor; a process (step S2) for calculating a local electronic density at prescribed temperature and in a Fermi level, based on the local state density; a process (step S3) for calculating an electronic density at prescribed temperature and in the Fermi level as a free electronic density, based on a free electronic state density; and a process (steps S3-S5) for determining the band edge energy of the free electronic state density so as to allow the local electronic density to coincide with the free electronic density, and (step S6) for allowing the determined band edge energy to be defined as the effective impurity potential by the impurities.;COPYRIGHT: (C)2009,JPO&INPIT