METHOD FOR OBTAINING PATTERN DENSITY OF DESIGNATED MATERIAL LAYER IN SEMICONDUCTOR DEVICE AND METHOD FOR SIMULATION OF CMP USING PATTERN DENSITY CALCULATING METHOD

摘要

PURPOSE: A method for pattern density of a designated material layer in a semiconductor device and a method r simulation of CMP(Chemical Mechanical Polishing) using the pattern density calculating method is provided to calculate a pattern density of a specified material layer accurately, to improve computing speed and estimation accuracy, and to program the simulation method as a readable medium to use the method in a computer. CONSTITUTION: A layout of one semiconductor chip including semiconductor devices is designed(310) and obtained pattern map data. The hierarchical structure pattern map data changes non-hierarchical structure pattern map data(315). To obtain pattern density, pattern cells and pattern windows are defined(320). After scaling(325), pattern density of all the pattern cells is calculated(330) by dividing the sum of each pattern area into the whole area of the pattern cells. To increase estimation accuracy, scaling process is carried out(325). In consideration of the effect of the surrounding pattern cell, pattern density is obtained by taking the effect of the surrounding pattern cells into consideration on the pattern density of each pattern cells(335). After analyzing the pattern density distribution(350), a dummy pattern is built(355). To prevent dishing problem using the pattern density, simulation is operated(340) to get a thickness of flattening layer after CMP(Chemical Mechanical Polishing) process. Using the result of simulation, CMP hold time and monitoring position is decided(345). After fixing the time and the position, the simulation result is reflected on the layout design.