A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials (950) disposed between the anode (120) and the cathode (170). The photoconductive materials (950) include a first continuous layer of donor material (152) and a second continuous layer of acceptor material (154). A first network of donor material or materials (953c) extends from the first continuous layer (152) toward the second continuous layer (154), providing continuous pathways for conduction of holes to the first continuous layer (152). A second network of acceptor material (953b) or materials extends from the second continuous layer (154) toward the first continuous layer (152), providing continuous pathways for conduction of electrons to the second continuous layer (154). The first network and the second network (953c,953b) care interlaced with each other. At least one other photoconductive material (953a,953d) is interspersed between the interlaced networks. This other photoconductive material or materials (953a,953d) has an absorption spectra different from the donor and acceptor materials.
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