Production manner of the piezoelectric body thin film wafer, it has the piezoelectric body thin film on the piezoelectric body thin film

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a piezoelectric thin film wafer, a piezoelectric thin film element, and a piezoelectric thin film device capable of finely processing a piezoelectric thin film in a short time and selectively stopping fine processing.;SOLUTION: A piezoelectric thin film wafer 1 equipped with a piezoelectric thin film 4 on a substrate 2 is manufactured by a first processing step of performing ion etching using a gas including Ar and a second processing step of performing reactive ion etching using a mixed etching gas of a reactive gas and Ar. Only a piezoelectric thin film 4 can be etched in a short time.;COPYRIGHT: (C)2012,JPO&INPIT