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Production manner of the piezoelectric body thin film wafer, the composition formula which was formed on the piezoelectric body thin film component,
Production manner of the piezoelectric body thin film wafer, the composition formula which was formed on the piezoelectric body thin film component,
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机译:压电体薄膜晶片的制造方式,在压电体薄膜成分上形成的组成式,
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摘要
A method for manufacturing a piezoelectric film wafer includes an etching step for carrying out a dry etching on a piezoelectric film formed on a substrate by using a gas containing Ar, and a step of changing a rate of the dry etching by detecting a change in an emission peak intensity of Na in emitted ion plasma the piezoelectric film. The piezoelectric film is made of an alkali niobate-based perovskite structure expressed in a composition formula (K1-xNax)NbO3 (0.4≦x≦0.7).
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