首页> 外国专利> Resist composition and patterning process using novel sulfonate salts and derivatives thereof, photoacid generator and this

Resist composition and patterning process using novel sulfonate salts and derivatives thereof, photoacid generator and this

机译:使用新型磺酸盐及其衍生物,光致产酸剂和该树脂的抗蚀剂组成和构图工艺

摘要

PPROBLEM TO BE SOLVED: To provide a photoacid generator that is highly sensitive to an ArF excimer laser beam and the like, gives no concerns about the accumulation in the human body, generates an acid (photoacid) having sufficiently high acidity, has high solubility in a resist solvent, and is excellently compatible with a resin, and a resist material comprising such a photoacid generator. PSOLUTION: The photoacid generator generates a sulfonic acid represented by general formula (2) (wherein n is an integer of 1-10; and R is a 1-20C substituted or unsubstituted linear, branched or cyclic alkyl or alkenyl group, a 6-15C substituted or unsubstituted aryl group, or a 4-15C heteroaryl group). A resist pattern formed by using such a photoacid generator exhibits excellent performances in adhesion to a substrate and etching resistance. PCOPYRIGHT: (C)2010,JPO&INPIT
机译:

要解决的问题:提供一种对ArF受激准分子激光束等高度敏感,不担心在人体中积累,产生具有足够高酸度的酸(光酸),在抗蚀剂溶剂中具有高溶解性,并且与树脂和包含这种光酸产生剂的抗蚀剂材料具有优异的相容性。

解决方案:光酸产生剂产生由通式(2)表示的磺酸(其中n为1-10的整数; R为1-20C取代或未取代的直链,支链或环状烷基或烯基, 6-15C取代或未取代的芳基或4-15C杂芳基)。通过使用这种光酸产生剂形成的抗蚀剂图案在对基板的粘附性和耐蚀刻性方面表现出优异的性能。

版权:(C)2010,日本特许厅&INPIT

著录项

  • 公开/公告号JP5347433B2

    专利类型

  • 公开/公告日2013-11-20

    原文格式PDF

  • 申请/专利权人 セントラル硝子株式会社;

    申请/专利号JP20080283256

  • 发明设计人 前田 一彦;成塚 智;磯野 芳美;

    申请日2008-11-04

  • 分类号C07C309/12;C07C381/12;C07D207/404;C07D207/444;C07D209/52;C07D491/18;C07D209/48;G03F7/004;G03F7/039;

  • 国家 JP

  • 入库时间 2022-08-21 16:11:39

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