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Gas monitoring equipment, combustion state monitoring device, aging monitoring equipment, and the impurity concentration monitoring device

机译:气体监测设备,燃烧状态监测设备,老化监测设备和杂质浓度监测设备

摘要

PPROBLEM TO BE SOLVED: To provide a gas monitoring device or the like that can reduce a dark current without a cooling mechanism and can monitor a gas with high sensitivity by using an InP type photodiode with a light receiving sensitivity expanded to a wavelength of ≥1.8 μm. PSOLUTION: A gas monitoring device includes a light receiving layer 3 having a multiquantum well structure of a group III-V semiconductor and each pn junction 15 is formed by selective impurity element diffusion in the light receiving layer, the concentration of the impurity in the light receiving layer is ≤5×10SP16/SP/cmSP3/SP, and the gas monitoring device receives light having at least one wavelength of ≤3 μm to detect a gas component and the like contained in the gas. PCOPYRIGHT: (C)2011,JPO&INPIT
机译:

要解决的问题:提供一种气体监测装置等,其可以在没有冷却机构的情况下减少暗电流,并且可以通过使用光接收灵敏度扩展到波长的InP型光电二极管来监测具有高灵敏度的气体。的≥ 1.8&m; m。解决方案:气体监测装置包括具有III-V族半导体的多量子阱结构的光接收层3,并且每个pn结15通过在光接收层中的选择性杂质元素扩散,杂质的浓度而形成。受光层中的光的波长为5×10 10 SP / cm 3 SP,并且气体监测装置接收具有至少3μm的波长的光。检测气体中包含的气体成分等。

版权:(C)2011,日本特许厅&INPIT

著录项

  • 公开/公告号JP5402972B2

    专利类型

  • 公开/公告日2014-01-29

    原文格式PDF

  • 申请/专利权人 住友電気工業株式会社;

    申请/专利号JP20110081850

  • 发明设计人 永井 陽一;稲田 博史;

    申请日2011-04-01

  • 分类号H01L31/10;

  • 国家 JP

  • 入库时间 2022-08-21 16:11:27

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