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Being the mannered null memory cell which operates memory cell,
Being the mannered null memory cell which operates memory cell,
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机译:作为操作存储单元的习惯的空存储单元,
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摘要
An apparatus and associated method for a non-volatile memory cell, such as a multi-bit magnetic random access memory cell. In accordance with various embodiments, a magnetic tunnel junction (MTJ) has a ferromagnetic free layer with multiple magnetic domains that are each independently programmable to predetermined magnetizations. Those magnetizations can then be read as different logical states of the MTJ.
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