MEMORY CELLS, NON-VOLATILE MEMORY ARRAYS, METHODS OF OPERATING MEMORY CELLS, METHODS OF READING TO AND WRITING A MEMORY CELL, AND METHODS OF PROGRAMMING A MEMORY CELL

摘要

In one aspect, a kind of operation storage unit includes programming state of the programming state than being used to read memory cell for changing the storage unit using electrode. In an aspect, storage unit includes having received material between the first and second opposite electrodes. Material is first and second transverse area of different compositions. First and second sides region are received the material along one of two laterally opposing edges. Another is received in the first and second side regions along the material of the other of described two laterally opposing edges. Airtight the first and second transverse area of petite person can be repeatedly programmed at least two different resistance states. Other aspects and implementation.