In the mannered null memory cell in order to produce memory cell and the said memory cell which

摘要

The memory cell has a substrate (2), a trench (3) in the substrate with lower, central and upper regions and an inner wall, an insulating collar (8) mounted in the central region on the inner wall, a dielectric coating (9) at least in the lower region, a conducting trench filling (10) at least partly filling the lower and central regions and an epitaxially grown layer (11) in the upper region on the inner wall and on the conducting filling. A second dielectric layer (12) with an internal opening is arranged in the upper region above the epitaxially grown layer.