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The alumina quality sintering body and its manufacturing method and the component for the semiconductor production device, the component for the liquid crystal panel production device and component null for the dielectric

机译:氧化铝质烧结体及其制造方法,半导体制造装置用部件,液晶面板制造装置用部件,电介质用零成分

摘要

PPROBLEM TO BE SOLVED: To provide an alumina sintered compact lowering dielectric dissipation factor in the megahertz to gigahertz bands, and to provide a method for producing the same, a member for a semiconductor production apparatus, a member for a liquid-crystal panel production apparatus and a member for a dielectric resonator. PSOLUTION: The alumina sintered compact comprises at least ≥99.3 mass% aluminum in terms of AlSB2/SBOSB3/SBand other elements including silicon and strontium as elements, is constituted of alumina crystal grains 1 as main crystal grains, and has a crystal phase containing the elements Si, Al, Sr, and O at triple points 2 constituted of alumina crystal grains 1. The alumina sintered compact can retain the excellent corrosion resistance, mechanical properties, and electrical properties of alumina since the sintered compact contains ≥99.3 mass% aluminum in terms of AlSB2/SBOSB3/SB. In addition, since the crystal phase, comprising a compound containing the elements Si, Al, Sr, and O and having a low loss, is present at the triple points 2 constituted of alumina crystal grains 1, the alumina sintered compact can have a lower loss than conventional ones in the megahertz to gigahertz bands. PCOPYRIGHT: (C)2009,JPO&INPIT
机译:

要解决的问题:提供一种氧化铝烧结体,其降低兆赫兹至千兆赫兹带的介电损耗因子,并提供其制造方法,用于半导体制造设备的部件,用于液晶的部件面板生产设备和介电共振器的构件。

解决方案:氧化铝烧结体包含至少99.3质量%的Al 2 O 3 铝和其他元素,包括硅和锶。由氧化铝晶粒1构成的主晶粒,并具有在由氧化铝晶粒1构成的三点2处包含Si,Al,Sr和O的元素的晶相。氧化铝烧结体可以保持优异的耐腐蚀性,机械性能。烧结体含有以Al 2 O 3 表示的99.3质量%以上的铝,因此具有氧化铝的特性和电特性。另外,由于在由氧化铝晶粒1构成的三点2处存在包含Si,Al,Sr和O的元素的化合物且损失少的结晶相,因此可以使氧化铝烧结体的结晶相降低。在兆赫兹至千兆赫兹波段的损耗要比常规波段高。

版权:(C)2009,日本特许厅&INPIT

著录项

  • 公开/公告号JP5435932B2

    专利类型

  • 公开/公告日2014-03-05

    原文格式PDF

  • 申请/专利权人 京セラ株式会社;

    申请/专利号JP20080301038

  • 发明设计人 古瀬 辰治;瀬野 裕明;

    申请日2008-11-26

  • 分类号C04B35/10;

  • 国家 JP

  • 入库时间 2022-08-21 16:10:56

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