CMOS Image Sensor with Column-wise Selective Charge-Domain Binning

摘要

An imaging device and method for operating the imaging device. Some embodiments comprise a pixel array configured as rows and columns of binning pixel units, each binning pixel unit including a plurality of photosensors that generate respective charge signals in response to incident light. Each binning pixel unit is configured to selectively bin the charge from at least two of the photosensors. The pixel array may be readout in a binning-pixel-unit row by binning-pixel-unit row basis. During readout of each binning pixel unit row, each binning pixel unit in the row is operable to selectively bin at least two of the charge signals therein based on a respective one of control signals provided to each of the binning pixel units in the row. In reading out a binning pixel unit row for a given image frame, a first binning pixel unit may perform in-pixel charge domain binning while a second binning pixel unit in the row may not bin the charge from the different photosensors therein. The respective control signals may be provided as a reset control signal coupled to the binning pixel units via respective vertical reset control lines, each of which is coupled to all of the binning pixel units in a respective column of binning pixel units, each reset control signal being operable to cause potential level resetting of a charge storage region in the binning pixel cell.