RACETRACK MEMORY WITH ELECTRIC-FIELD ASSISTED DOMAIN WALL INJECTION FOR LOW-POWER WRITE OPERATION

摘要

Embodiments are directed to injecting domain walls in a magnetic racetrack memory. In some embodiments, a racetrack comprising a nanowire is coupled with a gate in order to manipulate an anisotropy associated with the nanowire. The racetrack and gate is coupled with a pinning layer configured to establish a magnetization direction in the nanowire.