ATOMIC LAYER DEPOSITION OF HIGH PERFORMANCE ANTI REFLECTION COATINGS ON DELTA-DOPED CCDS

摘要

A back-illuminated silicon photodetector has a layer of Al₂O₃ deposited on a region of a silicon oxide surface that is left uncovered, while deposition is inhibited in another region by a contact shadow mask. The Al₂O₃ layer is an antireflection coating. In addition, the Al₂O₃ layer can also provide a chemically resistant separation layer between the silicon oxide surface and additional antireflection coating layers. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al₂O₃ layer is expected to provide similar antireflection properties and chemical protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.