A method for patterning a substrate is described. The method includes forming a layer of radiation-sensitive material on a substrate, and preparing a pattern in the layer of radiation-sensitive material using a lithographic process, wherein the pattern is characterized by a critical dimension (CD) and a roughness. Following the preparation of the pattern in the layer of radiation-sensitive material, the method further includes performing a CD slimming process to reduce the CD to a reduced CD, and performing a vapor smoothing process to reduce the roughness to a reduced roughness.
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