A method of patterning the substrates 110, 310, 410, and 606 is described. The method includes forming a layer of radiation sensitive material 120, 320, 420, 616 on a substrate 110, 310, 410, 606, and forming a layer of radiation sensitive material 120, 320, 321, 422, 612, wherein the pattern (122, 321, 422, 612) comprises a CD (critical dimension) (124, 325, 618) And roughness (125, 424, 649). After fabricating patterns 122, 321, 422 and 612 on the layers of radiation sensitive material 120, 320, 420 and 616, the method can reduce CD 124, 325 and 618 to reduced CD 134, (CD) slimming process to reduce the roughness (125, 424, 649) to a reduced roughness (135, 425, 669) smoothing process).
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